| 摘要 |
PROBLEM TO BE SOLVED: To prevent a kink effect while suppressing an increase in parasitic capacity during a high-temperature operation. SOLUTION: The semiconductor device includes a trap layer 13 which has a plurality of quantum dots (quantum boxes) 13a of i-InAs and which is formed between a buffer layer 12 of i-InAlAss and an n-type barrier layer 15 of n- InAlAs. In the trap layer 13, when an InAs layer grows on a GaAs layer or InGaAs layer, quantum dots of InAs are formed in a self-organized manner on the GaAs or InGaAs layer. COPYRIGHT: (C)2003,JPO
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