| 摘要 |
PROBLEM TO BE SOLVED: To planarize the surface of a SiC single crystal substrate to an atomic level at a high speed. SOLUTION: A SiC substrate 11 is cut out from a single crystal so that surfaces (11-20) are exposed and put into a graphitic crucible 12. A polycrystalline SiC body 13 and SiC powder 14 are placed around the SiC substrate 11, and Ta plates 15 are placed under the substrate 11 and on inner walls of the crucible 12. The crucible 12 is heated in a range from 1,700°C to 2,750°C under a nitrogen atmosphere to obtain a planarized surface at an atomic level (planarity of about 0.3 nm) at a higher speed (etching rate of 200-300μm/hour) than that in a prior method. COPYRIGHT: (C)2003,JPO
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