| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which higher speed write of a copy can be performed. <P>SOLUTION: The device is provided with a memory cell array 100 in which electrically reloadable nonvolatile memory cells are arranged, a plurality of rewriting/read circuit 200 having a function in which data to be written by the memory cell array 100 is held and a function by which data of the memory cell array is read, and a control circuit 110 controlling read and write operation of data, also, the device has a control mode in which read operation of data of a second page of the memory cell array 100 for the rewriting/read circuit 200 is performed interrupting data write operation of a first page of the memory cell array 100 by write data held in the rewriting/read circuit 200. <P>COPYRIGHT: (C)2003,JPO</p> |
