| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment apparatus by which the quantity of a residual solvent that influences line-width deviation can be controlled. SOLUTION: A prebake unit (PB) comprises a loading pedestal 25 which has a heat source and on which a wafer W having a resist film formed on the wafer surface is loaded and a treatment chamber 50 that houses the wafer W held on the loading pedestal 25. An exhaust opening 61 provided on the upper part of the treatment chamber 50 and capable of exhausting the atmosphere on the surface of the wafer W, and an upper plate 80 installed between the wafer W and the exhaust opening 61 and having different opening ratios depending on different concentric diameters, are installed to control the volatilization rate of the residual solvent during the heat treatment. COPYRIGHT: (C)2003,JPO |
