发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which enables suppression of resistant value rising or wire disconnection in a conductive plug, which is ascribed to discharge of water from an insulating film, while reducing capacity between adjacent wiring layers. SOLUTION: This semiconductor device is provided with a modified SOG film 15 which results from selective modification of an organic SOG film 14 by allowing impurities to be selectively directed into areas in the vicinities of contact surfaces between lower wirings 12 of the organic SOG film 14 and plugs 19a and 19b. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003234403(A) 申请公布日期 2003.08.22
申请号 JP20020328455 申请日期 2002.11.12
申请人 SANYO ELECTRIC CO LTD 发明人 MATSUBARA NAOTERU;MIZUHARA HIDEKI;GOTO TAKASHI
分类号 H01L21/768;H01L21/316;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/768
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