摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables suppression of resistant value rising or wire disconnection in a conductive plug, which is ascribed to discharge of water from an insulating film, while reducing capacity between adjacent wiring layers. SOLUTION: This semiconductor device is provided with a modified SOG film 15 which results from selective modification of an organic SOG film 14 by allowing impurities to be selectively directed into areas in the vicinities of contact surfaces between lower wirings 12 of the organic SOG film 14 and plugs 19a and 19b. COPYRIGHT: (C)2003,JPO
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