| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the fluctuation of the characteristics of semiconductor elements in upper and lower layers, and preventing any thermal noise from being generated. SOLUTION: This semiconductor device is provided with a first TFT and a second TFT laminated with an inter-layer insulating film interposed, and the first and the second TFT are provided with an active layer having two impurity areas and a plurality of channel formation areas interposed between the two impurity areas, a gate insulating film brought into contact with the active layer, and a gate electrode overlapped with a plurality of channel formation areas with the gate insulating film interposed. A plurality of channel formation areas are separated from each other with the gate insulating film and the gate electrode interposed, and a plurality of channel formation areas of the first TFT are configured as single-crystal. A base film is formed between the inter-layer insulating film and the second TFT, and the base film is provided with projecting parts in a part of the area surrounded by each of the channel formation areas of the second TFT and the two impurity areas. COPYRIGHT: (C)2003,JPO
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