| 摘要 |
PROBLEM TO BE SOLVED: To enhance pressure resistance by increasing the threshold energy of impact ionization in a semiconductor device which has at least one p-n junction which is composed on a GaAs semiconductor substrate, for example, a heterojunction bipolar transistor (HBT). SOLUTION: The direction (arrow 43) that is the main direction of travel electron for electrons in an n-type layer, that is, a collector layer 33, is set so as to substantially be the direction <111> of a GaAs semiconductor substrate 31, and in an HBT30, a collector breakdown voltage (collector withstanding voltage) is raised up. COPYRIGHT: (C)2003,JPO
|
