| 摘要 |
<p>The disc susceptor (1) for epitaxial growth reactors is of the type adapted to be heated by induction and is provided with an upper side (11) and with a lower side (12); at least one recess (2) adapted to house at least one corresponding substrate (3) to be subjected to epitaxial growth is formed in the upper side (11); indentations (4) such as to reduce locally the thickness of the susceptor (1) are provided on the lower side (12) in regions corresponding to the peripheral regions of the recess (2).</p> |
