INTERCONNECTION OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An interconnection of a semiconductor device and a manufacturing method thereof are provided to improve bit line contact margin by using wet-etching with good selectivity. CONSTITUTION: A gate electrode(23) is formed on a substrate(21) to isolate the substrate through a gate oxide layer(22). A gate cap insulating layer(24) is stacked on the gate electrode. A gate spacer(27) is formed at both sidewalls of the gate electrode. A source/drain region(26) is formed in the substrate to align the gate electrode. A plug layer is formed between the gate electrodes. A bit line(33) is formed to contact the plug layer through an interlayer dielectric(31).