| 摘要 |
The structure around a high-resistance element is formed in mirror symmetry to a plane perpendicular to a semiconductor substrate and the surface of the sheet. Specifically, high-resistance element, contact plugs and extending portion of interconnection layers are symmetric, each of the interconnection layers covering high-resistance element by the same amount. Thus, a semiconductor device of which degree of freedom on designing layout of interconnections which is to be connected to interconnection layers electrically connected to the high-resistance element via contact plugs can be attained.
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