发明名称 |
Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
摘要 |
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant. The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide/nitride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. The barrier layer is then formed in the recess. The process is continued with a formation of a second insulative layer, a potion of which is removed to form an opening exposing a portion of the barrier layer. An oxidation resistant conductive layer is deposited in the recess and forms at least a portion the storage node electrode of the capacitor. Next a dielectric layer having a high dielectric constant is formed to overly the storage node electrode and a cell plate electrode is fabricated to overly the dielectric layer.
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申请公布号 |
US2003156380(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20020321782 |
申请日期 |
2002.12.17 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FAZAN PIERRE C.;SANDHU GURTEJ S. |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;H01L21/8246;H01L27/115;(IPC1-7):H01G4/008 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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