发明名称
摘要 A substrate is prebaked in an oxygen furnace. A thin film of layered superlattice oxide is formed on the substrate by a chemical vapor deposition process. The film is RTP baked to provide grains with a mixed phase of A-axis and C-axis orientation. The film may be treated by ion implantation prior to the RTP bake and oxygen furnace annealed after the RTP bake. An electrode is deposited on the layered superlattice thin film and then the film and electrode are oxygen furnace annealed.
申请公布号 KR100313425(B1) 申请公布日期 2003.08.21
申请号 KR19960700231 申请日期 1996.01.12
申请人 发明人
分类号 C30B29/10;H01L21/314;C23C16/02;C23C16/40;C23C16/56;C23C18/12;C30B7/00;C30B25/02;C30B29/68;C30B31/22;C30B33/02;H01C7/10;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/108;H01L27/115;H01L29/788;H01L29/792 主分类号 C30B29/10
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