| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to improve resistance and reliability of metal lines by improving topology in a contact hole. CONSTITUTION: A lower interconnection is formed on a semiconductor substrate. A contact hole is formed to expose the lower interconnection by depositing and patterning an insulating layer on the resultant structure. The first conductive layer is formed in the contact hole. An opening part is formed by etch-back of the first conductive layer. The second conductive layer(35) is formed on the first conductive layer including the opening part.
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