发明名称 |
Film forming method and substrate |
摘要 |
A film forming method comprising: supplying a reactive gas comprising a compound including a metal atom between facing electrodes; arranging a substrate between the electrodes; making the reactive gas in a plasma state by applying a voltage between the electrodes under atmospheric pressure or under a pressure in a vicinity of the atmospheric pressure and discharging; and forming a metal film on a surface of the substrate by supplying a reducing gas having a reducing property into a plasma atmosphere in which the reactive gas in the plasma state exists.
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申请公布号 |
US2003157378(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20030364551 |
申请日期 |
2003.02.11 |
申请人 |
MIZUNO WATARU;FUKUDA KAZUHIRO;KONDO YOSHIKAZU;TODA YOSHIRO;OISHI KIYOSHI;NISHIWAKI AKIRA |
发明人 |
MIZUNO WATARU;FUKUDA KAZUHIRO;KONDO YOSHIKAZU;TODA YOSHIRO;OISHI KIYOSHI;NISHIWAKI AKIRA |
分类号 |
H05H1/46;C23C16/06;C23C16/18;C23C16/509;C23C16/54;(IPC1-7):B32B15/00;C23C16/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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