发明名称 Method of manufacturing integrated circuit, and substrate with integrated circuit formed by the method of manufacturing integrated circuit
摘要 There is provided a process for producing an integrated circuit, wherein not only can conductive fine particles be deposited efficiently and densely in minute wiring channels and connecting holes but also a circuit of low wiring resistance and high density can be formed and wherein a high-degree integration can be achieved to thereby bring about an economic advantage. In particular, there is provided a process for producing an integrated circuit, comprising coating a substrate provided with wiring channels with a coating liquid for integrated circuit formation containing conductive fine particles to thereby form an integrated circuit on the substrate, wherein the coating liquid for integrated circuit formation while being exposed to ultrasonic waves is applied to the wiring channels.
申请公布号 US2003157272(A1) 申请公布日期 2003.08.21
申请号 US20020275087 申请日期 2002.11.01
申请人 TONAI ATSUSHI;HIRAI TOSHIHARU;KOYANAGI TSUGUO;MATSUDA MASAYUKI;KOMATSU MICHIO 发明人 TONAI ATSUSHI;HIRAI TOSHIHARU;KOYANAGI TSUGUO;MATSUDA MASAYUKI;KOMATSU MICHIO
分类号 H01L21/288;H01L21/768;(IPC1-7):B05D5/12 主分类号 H01L21/288
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