发明名称 Magnetic thin-film memory device for quick and stable reading data
摘要 An MTJ memory cell is independently provided with a write word line and a read word line used for data write and data read. By separately arranging read word lines every two regions formed by dividing a memory array in the column direction, it is possible to reduce signal propagation delays of the read word lines and accelerate the data read operation. Activation of each read word line is controlled by a write word line in accordance with a row selection result in a hierarchical manner. A word-line-current control circuit forms and cuts off the current path of a write word line correspondingly to data write and data read.
申请公布号 US2003156448(A1) 申请公布日期 2003.08.21
申请号 US20010887321 申请日期 2001.06.25
申请人 发明人 HIDAKA HIDETO
分类号 G11C11/14;G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/14 主分类号 G11C11/14
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