摘要 |
A magnetoresistance sensor structure includes a magnetoresistance sensor having a sensor surface plane and having a free layer. An upper antiferromagnetic layer overlies at least a portion of the free layer, and an upper ferromagnetic layer overlies and contacts at least a portion of the upper antiferromagnetic layer on a contact face lying parallel to the sensor surface plane, so that the upper antiferromagnetic layer lies between the upper ferromagnetic layer and the free layer. The magnetoresistance sensor may be a giant magnetoresistance sensor or a tunnel magnetoresistance sensor.
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