发明名称 Magnetoresistance sensor having an antiferromagnetic pinning layer with both surfaces pinning ferromagnetic bias layers
摘要 A magnetoresistance sensor structure includes a magnetoresistance sensor having a sensor surface plane and having a free layer. An upper antiferromagnetic layer overlies at least a portion of the free layer, and an upper ferromagnetic layer overlies and contacts at least a portion of the upper antiferromagnetic layer on a contact face lying parallel to the sensor surface plane, so that the upper antiferromagnetic layer lies between the upper ferromagnetic layer and the free layer. The magnetoresistance sensor may be a giant magnetoresistance sensor or a tunnel magnetoresistance sensor.
申请公布号 US2003156362(A1) 申请公布日期 2003.08.21
申请号 US20020081046 申请日期 2002.02.20
申请人 GILL HARDAYAL SINGH 发明人 GILL HARDAYAL SINGH
分类号 G01R33/09;G11B5/00;G11B5/39;(IPC1-7):G11B5/39 主分类号 G01R33/09
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