| 摘要 |
<p>The invention provides a3 4 kHz repetition rate fluoride excimer laser chamber (22) for producing an UV wavelength < 200nm, and in particular an argon fluoride excimer laser chamber (22) for producing a UV wavelength 193 nm output. The3 4 kHz repetition rate argon fluoride excimer laser system includes an argon fluoride excimer laser chamber (22) for producing a 193 nm discharge at a pulse repetition rate3 4 kHz. The3 4 kHz repetition rate argon fluoride excimer laser chamber (10) also includes magnesium fluoride crystal optic windows (20) for outputting the 193 nm discharge as a3 4 kHz repetition rate excimer laser 193 nm output with the magnesium fluoride crystal optic windows (20) having a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to S million pulses of 193 nm light at a fluence3 40mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30%.</p> |
