发明名称 |
Apparatus and method for forming low dielectric constant film |
摘要 |
A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage. |
申请公布号 |
US2003154921(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20020280257 |
申请日期 |
2002.10.24 |
申请人 |
MATSUKI NOBUO;UMEMOTO SEIJIRO;HYODO YASUYOSHI |
发明人 |
MATSUKI NOBUO;UMEMOTO SEIJIRO;HYODO YASUYOSHI |
分类号 |
C23C16/00;C23C16/509;C23F1/00;H01L21/306;H01L21/31;H01L21/469;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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