METHOD FOR DEPOSITING METAL LAYERS EMPLOYING SEQUENTIAL DEPOSITION TECHNIQUES

摘要

A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber (110) and exposing the substrate surface to a boride (120). A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound (130) and a reducing gas (150) selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.