| 发明名称 |
Hafnium silicide target for gate oxide film formation and its production method |
| 摘要 |
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film, and the manufacturing method thereof.
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| 申请公布号 |
US2003155229(A1) |
申请公布日期 |
2003.08.21 |
| 申请号 |
US20030362044 |
申请日期 |
2003.02.19 |
| 申请人 |
IRUMATA SHUICHI;SUZUKI RYO |
发明人 |
IRUMATA SHUICHI;SUZUKI RYO |
| 分类号 |
C22C27/00;C23C14/06;C23C14/08;C23C14/34;H01L21/314;H01L21/316;H01L29/78;(IPC1-7):C23C14/32;C23C14/00 |
主分类号 |
C22C27/00 |
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