| 摘要 |
PURPOSE: Provided is a dielectric composition for Y5V layered chip capacity with Ni used as an internal electrode which adds a certain quantity of NiO to BCSTZ or BCTZ basic composition so that it guarantees excellent insulation property with minimizing the reduction of dielectric constant. CONSTITUTION: The dielectric composition for Y5V layered chip capacity with Ni used as the internal electrode contains (Ba1-x-yCaxSry)m(Ti1-zZrz)O3 as a basic component with meeting 0.05<=x<=0.07mol%, 0.09<=y<=0.10mol%, 0.12<=z<=0.18mol% and 1 <=m<=1.05mol%. The dielectric composition is characterized by including 0.1-0.5wt% of NiO; not less than one materials from HfO2, MnO2 and ZrO2; and not less than one material from Y2O3, V2O5, Al2O3 and Er2O3.
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