发明名称 Method of filling trenches
摘要 This invention relates to a method of filling at least one trench or other opening in a substrate including depositing a dielectric material into the trench or opening and annealing the deposited material during or after the application of pressure. The process may be stepwise and the anneal step may at least include or be followed by the exposure of the substrate to an H2 plasma.
申请公布号 US2003157781(A1) 申请公布日期 2003.08.21
申请号 US20020220800 申请日期 2002.11.08
申请人 MACNEIL JOHN;BEEKMAN KNUT;WILBY TONY 发明人 MACNEIL JOHN;BEEKMAN KNUT;WILBY TONY
分类号 H01L21/76;H01L21/316;H01L21/762;(IPC1-7):H01L21/44 主分类号 H01L21/76
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