发明名称 |
Method of filling trenches |
摘要 |
This invention relates to a method of filling at least one trench or other opening in a substrate including depositing a dielectric material into the trench or opening and annealing the deposited material during or after the application of pressure. The process may be stepwise and the anneal step may at least include or be followed by the exposure of the substrate to an H2 plasma.
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申请公布号 |
US2003157781(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20020220800 |
申请日期 |
2002.11.08 |
申请人 |
MACNEIL JOHN;BEEKMAN KNUT;WILBY TONY |
发明人 |
MACNEIL JOHN;BEEKMAN KNUT;WILBY TONY |
分类号 |
H01L21/76;H01L21/316;H01L21/762;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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