发明名称 |
Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof |
摘要 |
A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
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申请公布号 |
US2003157801(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20020305258 |
申请日期 |
2002.11.27 |
申请人 |
KOZAWA MIWA;NOZAKI KOJI;NAMIKI TAKAHISA;KON JUNICHI;YANO EI |
发明人 |
KOZAWA MIWA;NOZAKI KOJI;NAMIKI TAKAHISA;KON JUNICHI;YANO EI |
分类号 |
G03F7/00;G03F7/40;G11B5/17;G11B5/31;H01L21/027;H01L21/8247;H01L27/115;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68;H01L21/302;H01L21/461 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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