发明名称 ENERGY EFFICIENT METHOD FOR GROWING POLYCRYSTALLINE SILICON
摘要 <p>Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites (120) develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like (120) dendrites causes the dendrites to grow and assume a generally flared shape.</p>
申请公布号 WO2003069027(P1) 申请公布日期 2003.08.21
申请号 US2003004360 申请日期 2003.02.13
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