| 摘要 |
An insulating film covering a Cu interconnection is formed. A contact hole which partially exposes the surface of the Cu interconnection is formed in the insulating film. A series of steps (steps (a) to (d)) including (a) a step of continuously supplying WF6 gas for a predetermined time, (b) a step of continuously exhausting the WF6 gas atmosphere for a predetermined time, (c) a step of continuously supplying SiH4 gas for a predetermined time, and (d) a step of continuously exhausting the SiH4 gas atmosphere for a predetermined time, is repeatedly executed to form W nuclei in the contact hole. Then, a W film is buried into the contact hole. This interconnection structure formation method can reliably bury the W film into the contact hole while preventing Cu elution from the Cu interconnection to the W plug.
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