| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to be capable of improving topology and overlay margin. CONSTITUTION: A conductive buried layer is formed in a substrate. A trench is formed to expose the buried layer by etching the substrate and the first insulating layer. A spacer is formed at inner walls of the trench. The first polysilicon layer is partially formed in the trench. The first insulating layer and the spacer are removed. A dielectric film and the second polysilicon layer are sequentially formed on the resultant structure including the trench. A gate electrode(38) is formed to isolate the second polysilicon layer. An impurity region(39) is formed in the substrate to align the gate electrode.
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