IRREVERSIBLE REDUCTION OF THE VALUE OF A POLYCRYSTALLINE SILICON RESISTOR
摘要
The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.
申请公布号
WO03069656(A1)
申请公布日期
2003.08.21
申请号
WO2003FR00445
申请日期
2003.02.11
申请人
STMICROELECTRONICS S.A.;WUIDART, LUC;MALHERBE, ALEXANDRE;BARDOUILLET, MICHEL
发明人
WUIDART, LUC;MALHERBE, ALEXANDRE;BARDOUILLET, MICHEL
