发明名称 |
METHOD OF PRODUCING A SEMICONDUCTOR LASER AND OPTICAL INTEGRATED SEMICONDUCTOR DEVICE INCLUDING THE SAME |
摘要 |
A semiconductor laser to be produced by a method of the present invention includes a semiconductor substrate, a diffraction grating with an irregular surface formed on the semiconductor substrate, and an optical guide layer grown on the diffraction grating. A period of time over which the optical guide layer grows is selected such that the guide layer does not fill up the valleys of the diffraction grating. Also, the period of time remains substantially constant without regard to the variation of height of the diffraction grating.
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申请公布号 |
CA2419233(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
CA20032419233 |
申请日期 |
2003.02.20 |
申请人 |
NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
发明人 |
YAMAZAKI, HIROYUKI |
分类号 |
H01S5/10;H01S5/12;H01S5/20;(IPC1-7):H01S5/00;H01S5/125 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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