| 摘要 |
The device comprises a resin coated conductor (RCC) structure 34',35 having a photosensitive stress absorbing resin layer 34'. An opening in the stress absorbing layer 34' is formed using photopatterning and corresponds to an opening formed in the underlying stress absorbing layer 34 formed from thermosetting resin. Flexible contacts formed from conductive powder or wirebonds are formed in the opening in the stress absorbing layers 34,34' which contact a pad on the underlying semiconductor device. Delamination of the flip-chip device mounted on a circuit board of differing thermal coefficient is reduced. |
