发明名称 |
POWER SEGMENTED ELECTRODE |
摘要 |
A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurality of electrodes which are supplied radiofrequency power in a manner which provides uniform processing of the substrate. The power to the electrodes can be supplied through a circuit incorporating interelectrode gap capacitance, one or more variable capacitors, one or more current sensors, a power splitter, one or more DC biasing sources, and/or power amplifier. |
申请公布号 |
EP0871975(B1) |
申请公布日期 |
2003.08.20 |
申请号 |
EP19960922561 |
申请日期 |
1996.06.20 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
DIBLE, ROBERT, D.;LENZ, ERIC, H.;LAMBSON, ALBERT, M. |
分类号 |
H05H1/46;H01J37/32;H01L21/302;H01L21/3065;H01L21/683 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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