Semiconductor light emitter and method for fabricating the same

摘要

A semiconductor light emitter includes: a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first layer; and a third semiconductor layer formed over the second layer. Bandgaps of the first and third layers are greater than a bandgap of the second layer. A high-quantum-level region is defined around an edge of the second layer. A first quantum level is higher in the high-quantum-level region than in the other region of the second layer.