| 摘要 |
<p>The polishing apparatus 1 consists of a cassette indexing part 100, a cleaning part 200, a polishing part 300, and a control device which performs overall control of the polishing apparatus. Unworked wafers are successively conveyed to the polishing part 300 from cassettes set in the cassette indexing part, and are polished using a polishing pad on the lower end of a polishing arm 311. The wafers for which polishing has been completed are conveyed by means of conveying robots 360 and 150, etc., and are accommodated in a cassette C4. While the polishing pad is being dressed, the control device causes a wafer surface state measuring device 50a to measure the microscopic surface state of the wafers, and corrects the polishing conditions on the basis of this measurement data. As a result, the polished state of the substrate can be measured without causing any deterioration in the throughput of the polishing apparatus, so that high-precision polishing can be achieved at a high yield. <IMAGE></p> |
