发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: A semiconductor integrated circuit is provided to realize the power consumption in a stand-by state which is smaller than a large subthreshold current of a MOS transistor even if a shrunken CMOS circuit is used. CONSTITUTION: In the circuit, a leakage current of the switch(S2) is set to a value smaller than the subthreshold current of the N-channel MOS transistor of the circuit(Ci) in which the low level is applied to the input(Ii). Therefore, at this time, the maximum current flowing from Ci to VS is the leakage current of the switch(S2). As a result, even when the MOS transistor having a low threshold voltage is used for Ci in order to perform the low voltage operation, the current flowing through Ci is not determined by the subthreshold current but is determined by the leakage current of the small switch(S2). Therefore, the current consumption in the stand-by stat is necessarily small.
申请公布号 KR100396399(B1) 申请公布日期 2003.08.20
申请号 KR20020056084 申请日期 2002.09.16
申请人 HITACHI DEVICE ENGINEERING CO., LTD.;HITACHI, LTD. 发明人 KAWAHARA TAKAYUKI;KAWAJIRI YOSHIKI;AKIBA TAKESADA;HORIGUCHI MASASHI;WATANABE TAKAO;KITSUKAWA GORO;KAWASE YASUSHI;TACHIBANA TOSHIKAZU;AOKI MASAKAZU
分类号 G11C5/14;G11C8/08;H03K19/00;(IPC1-7):G11C11/40 主分类号 G11C5/14
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