发明名称 |
Long-band erbium doped fiber amplifier |
摘要 |
The present invention discloses a long-band Erbium doped fiber amplifier (30) including: a first Erbium doped fiber (316) with a predetermined length, coupled to a first pumping light source (318) through a first wavelength selective coupler (314), for amplifying a C-band optical signal by supplied pumping light; a second Erbium doped fiber (330) with a predetermined length for amplifying an L-band optical signal by a second pumping light source (340); a feedback loop for recycling a specific C-band wavelength generated in the amplification of the first Erbium doped fiber as the second pumping light source of the L-band optical signal; a tap coupler (320) formed between the first and second Erbium doped fibers, for dividing the optical power amplified in the first Erbium doped fiber, for supplying a predetermined ratio of optical power to the second Erbium doped fiber, and for re-inputting the residual optical power to the feedback loop; and, a second wavelength selective coupler (328) for coupling the signal light transmitted from the tap coupler to the first Erbium doped fiber. <IMAGE>
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申请公布号 |
EP1337017(A2) |
申请公布日期 |
2003.08.20 |
申请号 |
EP20020025562 |
申请日期 |
2002.11.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG, KWAN-WOONG;HWANG, SEONG-TAEK |
分类号 |
H01S3/23;G02B6/00;H01S3/06;H01S3/067;H01S3/094;H01S3/10;H01S3/106;H01S3/16;(IPC1-7):H01S3/067 |
主分类号 |
H01S3/23 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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