METHOD FOR EPITAXIAL GROWTH ON A SUBSTRATE

摘要

The invention concerns a method for epitaxial growth of a material on a first solid material from a material melting on the material, characterized in that it comprises: a step of growth of the first material on the substrate, made of a second material; a step whereby crystalline tips of the first material are made to grow from the contact surface between the first material and the melting material; a step which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.