发明名称 |
Method using ultraviolet radiation for integrated circuit manufacturing |
摘要 |
A method is provided for manufacturing an integrated circuit including a substrate with a gate layer and a gate dielectric provided on the substrate. The gate layer is formed into a gate using a process that imposes a charge in the gate dielectric. The substrate, gate, and gate dielectric are irradiated to discharge the charge across the gate dielectric.
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申请公布号 |
US6607993(B1) |
申请公布日期 |
2003.08.19 |
申请号 |
US20020224061 |
申请日期 |
2002.08.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
DICKINSON RONALD;TEO YEOW MENG;QI DONG XIANG;RAJGOPAL RAJAN |
分类号 |
H01L21/28;H01L21/768;(IPC1-7):H01L21/476;H01L21/26;H01L21/302;H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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