发明名称 Ion implantation beam monitor
摘要 An ion implanter, the total return current between the substrate holder and flight tube is measured. Measuring the total current returned to the flight tube provides a useful indication of the total ion current in the ion beam leaving the flight tube as well as any electrons travelling back to, and being absorbed by, the flight tube. This in turn permits the quality of the ion beam post mass selection to be monitored, continuously if desired. The total current returned to the flight tube can be compared with the current measured by the beam, the latter varying rapidly with time as the beam stop is periodically occluded by the rotating substrate wheel.In order to general a potential difference between the substrate holder and the flight tube, either a power supply or an active resistance such as an FET chain can be employed.
申请公布号 US6608316(B1) 申请公布日期 2003.08.19
申请号 US20010720777 申请日期 2001.04.02
申请人 APPLIED MATERIALS, INC. 发明人 HARRISON BERNARD FRANCIS
分类号 H01J37/304;H01J37/317;(IPC1-7):H01J37/317 主分类号 H01J37/304
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