| 摘要 |
PURPOSE: A method for manufacturing a GaN substrate is provided to be capable of reducing complicate manufacturing processes due to the laser irradiating direction and improving the selecting range of width for a laser used at a lift-off process by forming a buffer layer between a sapphire substrate and a GaN layer, or growing the GaN layer on GaAs. CONSTITUTION: A buffer layer(21) made of InN or InGaN, is grown on the upper portion of a sapphire substrate(20). A GaN layer(22) is grown on the upper portion of the buffer layer. Laser beam is irradiated onto the upper portion of the GaN layer for separating the buffer layer from the sapphire substrate. Preferably, the laser beam has a wavelength of 363 nm, or more. |
