| 摘要 |
The present invention pertains to systems and methods for simultaneously producing a diffusion barrier and a seed layer used in integrated circuit metallization. This is achieved by initially depositing copper-magnesium (Cu-Mg) alloys with relatively high levels of Mg (>10 atomic %, which is equivalent to about >4 weight %). After the alloys are deposited, they self-form a magnesium oxide (MgO) based barrier layer at the substrate interface, thus eliminating the need for a separate operation for barrier deposition. The migration of Mg to the substrate interface leaves the remainder of the film relatively pure Cu.
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