发明名称 |
High voltage vertical conduction superjunction semiconductor device |
摘要 |
A high voltage vertical conduction semiconductor device has a plurality of deep trenches or holes in a lightly doped body of one conductivity type. A diffusion of the other conductivity type is formed in the trench walls to a depth and a concentration which matches that of the body so that, under reverse blocking, both regions fully deplete. The elongated trench or hole is filled with a dielectric which may be a composite of nitride and oxide layers having a lateral dimension change matched to that of the silicon. The filler may also be a highly resistive SIPOS which permits leakage current flow from source to drain to ensure a uniform electric field distribution along the length of the trench during blocking.
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申请公布号 |
US6608350(B2) |
申请公布日期 |
2003.08.19 |
申请号 |
US20000732401 |
申请日期 |
2000.12.07 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
KINZER DANIEL M.;SRIDEVAN SRIKANT |
分类号 |
H01L21/336;H01L21/76;H01L29/06;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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