LATERAL DMOS TRANSISTOR HAVING REDUCED SURFACE FIELD STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A lateral DMOS transistor having a reduced surface field structure and a method for manufacturing the same are provided to be capable of improving the reliability of the transistor and reducing the number of photolithography processes by forming a bottom layer between a drift region and a silicon substrate. CONSTITUTION: A lateral DMOS transistor(100) is provided with the first conductive type semiconductor substrate(102), the second conductive type drift region(104) located at the upper portion of the semiconductor substrate, the first bottom layer(106) located at the predetermined portion between the semiconductor substrate and the drift region, the second bottom layer(108) having a predetermined slope, formed and connected with one side of the first bottom layer, the first conductive type well region(118) located on the upper portion of the first bottom layer, and the first conductive type body region(116) located on the upper portion of the well region.