发明名称 |
Hard mask removal process including isolation dielectric refill |
摘要 |
A method for repairing an isolation dielectric damaged during a semiconductor fabrication process is disclosed in which a hard mask material is used to pattern a first material, the first material having openings therein exposing isolation regions comprising a first isolation dielectric layer. The method includes etching the hard mask material from the first material, wherein the etch creates gouges in the first isolation dielectric layer, and depositing a second layer of isolation dielectric over the first material, wherein the second isolation dielectric layer fills the gouges in the first isolation dielectric layer. The method further includes polishing on the second layer of isolation dielectric to remove the second layer of isolation dielectric from the first material.
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申请公布号 |
US6607925(B1) |
申请公布日期 |
2003.08.19 |
申请号 |
US20020165837 |
申请日期 |
2002.06.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KIM UNSOON;HOPPER DAWN M.;WU YIDER;ACHUTHAN KRISHNASHREE |
分类号 |
H01L21/316;H01L21/762;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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