发明名称 |
Active matrix liquid crystal display device having reduced leak current and switching element used therein |
摘要 |
A thin film transistor is designed in such a manner that a semiconductor region includes source and drain electrodes in a channel width direction and further, a planar source-side overlap area constructed by a gate electrode, the source electrode and the semiconductor region and a planar drain-side overlap area constructed by the gate electrode, the drain electrode and the semiconductor region exist. An optimal overlap length of one of the source-side and drain-side overlap areas in a channel length direction is determined, for instance, to be 4 mum, for a light incident on a channel portion of the thin film transistor to have a light intensity below or equal to 0.2% of a light intensity of the backlight incident toward the thin film transistor, thereby reducing a light-induced OFF leak current sufficiently and further improving flickering and display uniformity.
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申请公布号 |
US6608653(B2) |
申请公布日期 |
2003.08.19 |
申请号 |
US20010995516 |
申请日期 |
2001.11.28 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
SHIGA SHUNSUKE;TAMURA FUMINORI;KUROHA SHOUICHI;WATANABE MAKOTO |
分类号 |
G02F1/1333;G02F1/1335;G02F1/13357;G02F1/1343;G02F1/1368;G09F9/00;G09F9/30;G09F9/35;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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