发明名称 Memory system including a memory device having a controlled output driver characteristic
摘要 A memory system and method of adjusting an output driver characteristic of a memory device that is included in the memory system. The method includes providing a command to the memory device that specifies a calibration mode and, during the calibration mode, driving a voltage level onto the first signal line using a first output driver. A first voltage level is derived from an amount of voltage swing generated by the first output driver driving the voltage level onto the first signal line. The method also includes: actively coupling a first comparator to the first signal line; when the first comparator is coupled to the first signal line, comparing the first voltage level with a reference voltage using the first comparator; and adjusting the amount of voltage swing to arrive at a calibrated voltage swing level. In addition, the method includes actively isolation the first comparator from the first signal line upon exiting the calibration mode. The memory device is operable in a normal read operation upon exiting the calibration mode. During the normal read operation, the first output driver is operable to output data onto the first signal line in accordance with the calibrated voltage swing level.
申请公布号 US6608507(B2) 申请公布日期 2003.08.19
申请号 US20020230931 申请日期 2002.08.29
申请人 RAMBUS INC. 发明人 GARRETT, JR. BILLY WAYNE;DILLON JOHN B.;CHING MICHAEL TAK-KEI;STONECYPHER WILLIAM F.;CHAN ANDY PENG-PUI;GRIFFIN MATTHEW M.
分类号 G06F13/40;G11C7/10;H03K19/003;H03K19/0185;H04L25/02;(IPC1-7):H03B1/00 主分类号 G06F13/40
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