| 发明名称 |
SEMICONDUCTOR EPITAXIAL SUBSTRATE |
| 摘要 |
A semiconductor epitaxial substrate, characterized in that a crystal is formed by epitaxial growth on a gallium arsenide single crystal substrate whose crystallographic plane azimuth is slanted from that of one of (100) planes at an angle of not more than 1.degree., that at least part of the epitaxial crystal is an In xGa(1-x)As crystal (wherein 0<x<1), and that the epitaxial growth is carried out by chemical vapor deposition. Since the In xGa(1-x)As layer has reduced microscopic unevenness and reduced variation in thickness, the epitaxial substrate of the present invention can be used as a channel layer of a field effect transistor or as an active layer of a semiconductor laser to endow these devices with excellent characteristics. -25-
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| 申请公布号 |
CA2131696(C) |
申请公布日期 |
2003.08.19 |
| 申请号 |
CA19942131696 |
申请日期 |
1994.01.12 |
| 申请人 |
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发明人 |
HATA, MASAHIKO;FUKUHARA, NOBORU;TAKATA, HIROAKI;INUI, KATSUMI |
| 分类号 |
H01L21/205;H01L21/335;H01S5/32;H01S5/323;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
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