| 摘要 |
Image sensors with an enhanced QE and MTF in the NIR spectral region are fabricated on the standard substrates. This is achieved by replacing the p+ type doped layer, typically present under the thick field oxide in the inactive regions of the sensor, with an n+ type doped layer. The n+ type layer, which is biased at the Vdd potential, surrounds the entire image sensor array as a guard ring and is separated from the CCD or CMOS array pixels by a suitable potential barrier. The potential barrier prevents collected charge from escaping into the n+ layer regions. Additional embodiments include output diode and MOS transistor designs that use field plates for creating potential barriers that separate these devices from the n+ type doped field regions.
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