| 摘要 |
A first photoresist film 36 with low sensitivity and a second photoresist film 38 with high sensitivity are stacked on an interlayer insulating film 14 formed on a semiconductor substrate (FIGS. 1A to 1C). The first and second photoresist films 36 and 38 are exposed simultaneously using a photolithography mask 40 having a first transmittance part 48 corresponding to the contact hole and a second transmittance part 50 corresponding to the upper wiring (FIG. 1D). They are developed so that the difference in depth between the contact hole and the upper wiring is three-dimensionally reflected in the first and second photoresist films 36 and 38 (FIG. 1E). Etching is carried out by using them as a mask to form the contact hole and the upper wiring. |
