CELL OF NON-VOLATILE MEMORY DEVICE HAVING FLOATING GATE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A cell of a non-volatile memory device having a floating gate and a method for manufacturing the same are provided to be capable of improving the topology of a cell array region and a peripheral region. CONSTITUTION: A cell of a non-volatile memory device is provided with isolation layers(64) formed and spaced apart from each other at the upper portion of a semiconductor substrate(50) for defining a plurality of active regions(59), a plurality of word lines(68w) formed across the upper portion of the isolation layers, and a tunnel oxide layer(52t), a floating gate(54f), a gate interlayer dielectric(56d) and a control gate electrode(58c) sequentially formed between the active regions and the word lines. At this time, the gate interlayer dielectric includes a dielectric layer having a dielectric constant larger than that of a silicon nitride layer.