| 摘要 |
A memory is provided having an array of rows and columns of memory cells. The memory includes plurality of sense amplifiers, each one having a true terminal and a compliment terminal. The memory also includes a plurality of pairs of twisted bit lines, each one of the pairs of lines being coupled to true and compliment terminals of a corresponding one of the plurality of sense amplifiers. A plurality of word lines is provided, each one being connected to a corresponding one of the rows of memory cells. An address logic section is fed by column address signals, fed to the bit lines, and row address signals, fed to the word lines, for producing invert/non-invert signals in accordance with the fed row and column address signals. The memory includes a plurality of inverters each one being coupled to a corresponding one of the sense amplifiers for inverting data fed to or read from the sense amplifier selectively in accordance with the invert/non-invert signals produced by the address logic. |
